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EMH2801
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
VRRM
VRSM
15
15
V
V
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
IO
IFSM
Tj
Tstg
Rectangular wave
50Hz sine wave, 1 cycle
2.0
20
--55 to +125
--55 to +125
A
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
--20
--1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
ID=--1.5A, VGS=--4.5V
--0.4
3.6
65
--1.3
85
V
S
m Ω
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
VDS=--10V, f=1MHz
See speci ? ed Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3A
IS=--3A, VGS=0V
98
155
320
66
50
7.1
21
37
32
4.0
0.6
1.1
--0.83
137
235
--1.2
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
[SBD]
Reverse Voltage
VR
IR=1mA
15
V
Forward Voltage
VF1
VF2
IF=1.0A
IF=2.0A
0.33
0.39
0.39
0.46
V
V
Reverse Current
Interterminal Capacitance
IR
C
VR=7.5V
VR=10V, f=1MHz
35
300
μ A
pF
No. A1821-2/8
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